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MOCVD Growth of GaSb and Al GaSb

E.Sustini, Sugianto, P.Arifin, M.Barmawi

Data & Software Engineering Research Group
STEI-ITB, Jl. Ganeca No.10, Bandung 40132, Indonesia

Abstract. GaSb and Al GaSb are narrow gap semiconductors, is of current interest, for its optoelectronic application in the near and medium infra-red region. The large ratio of the ionization coefficient of hole and electrons is key factor for high speed and low noise in APD. In this paper we report the frowth of GaSb and AlGaSb in a home made vertical MOCVD reactor using trymethylgalium (TMGa), trymethylalumunium (TMAl) and tridismethylaminiantimonat (TDMASb) as metalorganic sources. In the reactor we used a flow guide to obtain uniform layers. The effect of growth temperature and the V/III ratio on the structural properties, surface morphology, optical and electronic properties is presented.

Keywords: GaSb,AlGaSb, MOCVD

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