DOI Number : 10.5614/itbj.sci.2009.41.1.2
Hits : 6

Electronic Transport Parameter of Carbon Nanotube Metal-Semiconductor On-Tube Heterojunction


Sukirno1, Satria Zulkarnaen Bisri2 & Irmelia1

1 Laboratory for Physics of Electronic Material, Faculty of Mathematics and Natural Sciences – Institut Teknologi Bandung (ITB). Jl. Ganesha 10 Bandung 40132 Indonesia

2 Institute for Material Research, Tohoku University, 1-1-2 Katahira, Aoba-ku, Sendai, Miyagi, 980-8577 Japan

Contact e-mail: sukirno@fi.itb.ac.id

 


Abstract. Carbon Nanotubes research is one of the top five hot research topics in physics since 2006 because of its unique properties and functionalities, which leads to wide-range applications. One of the most interesting potential applications is in term of nanoelectronic device. It has been modeled carbon nanotubes heterojunction, which was built from two different carbon nanotubes, that one is metallic and the other one is semiconducting. There are two different carbon nanotubes metal-semiconductor heterojunction. The first one is built from CNT(10,10) as metallic carbon nanotube and CNT (17,0) as semiconductor carbon nanotube. The other one is built from CNT (5,5) as metallic carbon nanotube and CNT (8,0). All of the semiconducting carbon nanotubes are assumed to be a pyridine-like N-doped. Those two heterojunctions are different in term of their structural shape and diameter. It has been calculated their charge distribution and potential profile, which would be useful for the simulation of their electronic transport properties. The calculations are performed by using self-consistent method to solve Non-Homogeneous Poisson’s Equation with aid of Universal Density of States calculation method for Carbon Nanotubes. The calculations are done by varying the doping fraction of the semiconductor carbon nanotubes The electron tunneling transmission coefficient, for low energy region, also has been calculated by using Wentzel-Kramer-Brillouin (WKB) approximation. From the calculation results, it is obtained that the charge distribution as well as the potential profile of this device is doping fraction dependent. It is also inferred that the WKB method is fail to be used to calculate whole of the electron tunneling coefficient in this system. It is expected that further calculation for electron tunneling coefficient in higher energy region as well as current-voltage characteristic of this system will become an interesting issue for this carbon nanotube based electronic device.

Keywords: carbon nanotube heterojunction, potential profile, molecular devices, doped carbon nanotubes.

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