DOI Number : 10.5614/itbj.sci.2006.38.2.3
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Studi Penumbuhan Film Tipis Ti(1-x)Co(x)O(2) dengan Teknik MOCVD Menggunakan Prekurosr Titanium (IV) Isopropoxide dan Tris (2,2,6,6-tetramethyl-3,5-heptanedionato) Cobalt (III)

Horasdia Saragih, Edy Supriyanto, Pepen Arifin & Mohammad Barmawi

Laboratorium Fisika Material Elektronika, Program Studi Fisika, Institut Teknologi Bandung, Jalan Ganesa 10 Bandung, Jawa Barat 40132, Indonesia

Abstract. The Ti1-xCoxO2 thin films have been grown by MOCVD technique using titanium (IV) isopropoxide (TTIP) and tris (2,2,6,6-tetramethyl-3, 5-heptanedionato) Cobalt (III) [Co(TMHD)3] powder precursors. The tetrahydrofuran (THF) were used as a solvent to get a Co(TMHD)3 solution. Characteristics of precursor and growth parameters were investigated. The Co concentration in thin films were varied. The room temperature ferromagnetic properties of Ti1-xCoxO2 thin films were obtained. Solubility of Co atom in TiO2 lattice were found at about 11%. The surface morphology of films are homogen and relatively smooth.

Keywords: Thin film; Ti1-xCoxO2, MOCVD; ferromagnetic.

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