Abstract. In this research, carbon nanotubes (CNT) fabrication is attempted by using existing home-made Plasma Enhanced Chemical Vapour Deposition (PECVD) system. The fabrication is a catalytic growth process, which Fe catalyst thin film is grown on the Silicon substrate by using dc-Unbalanced Magnetron Sputtering method. By using methane (CH4) as the source of carbon and diluted silane (SiH4) in hydrogen as the source of hydrogen with 10:1 ratio, CNT fabrications have been attempted by using Very High Frequency PECVD (VHF-PECVD) method. The fabrication processes are done at relatively low temperature, 250oC, but with higher operated plasma frequency, 70 MHz. Recently, it is also been attempted a fabrication process with only single gas source, but using one of the modification of the VHF-PECVD system, which is by adding hot-wire component. The attempt was done in higher growth temperature, 400oC. Morphological characterizations, by using Scanning Electron Micrograph (SEM) and Scanning Probe Microscopy (SPM), as well as the composition characterization, by using Energy Dispersion Analysis by X-Ray (EDAX), show convincing results that there are some signatures of CNT present.
Keywords: 250oC; 70 MHz; dc Unbalanaced Magnetron Sputtering; fabrication of CNT by VHF PECVD
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