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The Influence of Silane Gas Flow Rate on Optoelectronic Properties of mc-Si:H Prepared by HWC-VHF-PECVD Technique
T. Winata1, I. Usman2
1Physics of Electronic Materials Research Group,
Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung, Indonesia
2Department of Physics, Haluoleo University, Kendari, Indonesia
E-mail: toto@fi.itb.ac.id
Abstract. Hydrogenated microcrystalline silicon (mc-Si:H) thin films have been deposited using 10% silane (SiH4) in H2 dilution by Hot Wire Cell Very High Frequency Plasma Enhanced Chemical Vapor Deposition (HWC-VHF-PECVD) technique. The resulted thin film characteristics were systematically studied as a function of the deposition parameter. The previous structural studies showed that the structural phase transition from amorphous to microcrystalline thin film was obtained using the filament temperature of 800 oC. In this study, the optoelectronic properties of mc-Si:H thin films were investigated as a function of the silane gas flow rate from 40 sccm to 80 sccm. The highest deposition rate of 3.6 Å/sec and the lower optical bandgap of 1.4 eV were obtained using 80 sccm and 60 sccm of the silane gas flow rate, respectively. The film showed the photosensitivity of 3 x 107, which is quite high above the minimal value of 103 for solar cell application.
Keywords: mc-Si:H, optoelectronic properties, HWC-VHF-PECVD technique
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