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Studi Penumbuhan Film Tipis Ti(1-x)Co(x)O(2) dengan Teknik MOCVD Menggunakan Prekurosr Titanium (IV) Isopropoxide dan Tris (2,2,6,6-tetramethyl-3,5-heptanedionato) Cobalt (III)
Horasdia Saragih, Edy Supriyanto, Pepen Arifin & Mohammad Barmawi
Laboratorium Fisika Material Elektronika, Program Studi Fisika, Institut Teknologi Bandung, Jalan Ganesa 10 Bandung, Jawa Barat 40132, Indonesia
email: horas@dosen.fisika.net
Abstract. The Ti1-xCoxO2 thin films have been grown by MOCVD technique using titanium (IV) isopropoxide (TTIP) and tris (2,2,6,6-tetramethyl-3, 5-heptanedionato) Cobalt (III) [Co(TMHD)3] powder precursors. The tetrahydrofuran (THF) were used as a solvent to get a Co(TMHD)3 solution. Characteristics of precursor and growth parameters were investigated. The Co concentration in thin films were varied. The room temperature ferromagnetic properties of Ti1-xCoxO2 thin films were obtained. Solubility of Co atom in TiO2 lattice were found at about 11%. The surface morphology of films are homogen and relatively smooth.
Keywords: Thin film; Ti1-xCoxO2, MOCVD; ferromagnetic.
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